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DMN1019UFDE-7

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RTD (Resistance Temperature Detector) [1000]
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DMN1019UFDE-7

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 800mV @ 250µA

Operating Temperature : -55°C ~ 150°C (TJ)

Package / Case : 6-PowerUDFN

Gate Charge (Qg) (Max) @ Vgs : 50.6 nC @ 8 V

Rds On (Max) @ Id, Vgs : 10mOhm @ 9.7A, 4.5V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 1.2V, 4.5V

Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®

Drain to Source Voltage (Vdss) : 12 V

Vgs (Max) : ±8V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 2425 pF @ 10 V

Mounting Type : Surface Mount

Series : -

Supplier Device Package : U-DFN2020-6 (Type E)

Mfr : Diodes Incorporated

Current - Continuous Drain (Id) @ 25°C : 11A (Ta)

Power Dissipation (Max) : 690mW (Ta)

Technology : MOSFET (Metal Oxide)

Base Product Number : DMN1019

Description : MOSFET N CH 12V 11A U-DFN2020-6E

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N-Channel 12 V 11A (Ta) 690mW (Ta) Surface Mount U-DFN2020-6 (Type E)

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