| Sign In | Join Free | My futurenowinc.com |
|
Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature : -
Vgs(th) (Max) @ Id : 4V @ 1mA
Operating Temperature : -55°C ~ 175°C (TJ)
Package / Case : TO-220-3
Gate Charge (Qg) (Max) @ Vgs : 24 nC @ 10 V
Rds On (Max) @ Id, Vgs : 65mOhm @ 18A, 10V
FET Type : N-Channel
Drive Voltage (Max Rds On, Min Rds On) : 10V
Package : Tube
Drain to Source Voltage (Vdss) : 150 V
Vgs (Max) : ±20V
Product Status : Active
Input Capacitance (Ciss) (Max) @ Vds : 1250 pF @ 30 V
Mounting Type : Through Hole
Series : TrenchMOS™
Supplier Device Package : TO-220AB
Mfr : Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C : 28.5A (Tj)
Power Dissipation (Max) : 150W (Tc)
Technology : MOSFET (Metal Oxide)
Base Product Number : PHP28NQ15
Description : MOSFET N-CH 150V 28.5A TO220AB
|
|
PHP28NQ15T,127 Images |
Friendly Links: www.everychina.com
Home| Products| Suppliers| Site Map |About Us |Contact Us |Help |关于我们 |联系我们
Thank you! Your message has been sent to the following suppliers.
