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Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature : -
Vgs(th) (Max) @ Id : 800mV @ 250µA
Operating Temperature : -55°C ~ 150°C (TJ)
Package / Case : TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs : 50.6 nC @ 8 V
Rds On (Max) @ Id, Vgs : 10mOhm @ 9.7A, 4.5V
FET Type : N-Channel
Drive Voltage (Max Rds On, Min Rds On) : 1.2V, 2.5V
Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss) : 12 V
Vgs (Max) : ±8V
Product Status : Active
Input Capacitance (Ciss) (Max) @ Vds : 2426 pF @ 10 V
Mounting Type : Surface Mount
Series : -
Supplier Device Package : SC-59-3
Mfr : Diodes Incorporated
Current - Continuous Drain (Id) @ 25°C : 9.3A (Ta)
Power Dissipation (Max) : 680mW (Ta)
Technology : MOSFET (Metal Oxide)
Base Product Number : DMN1019
Description : MOSFET N-CH 12V 9.3A SC59
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DMN1019USN-7 Images |
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