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SI2374DS-T1-GE3

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SI2374DS-T1-GE3

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 1V @ 250µA

Operating Temperature : -55°C ~ 150°C (TJ)

Package / Case : TO-236-3, SC-59, SOT-23-3

Gate Charge (Qg) (Max) @ Vgs : 20 nC @ 10 V

Rds On (Max) @ Id, Vgs : 30mOhm @ 4A, 4.5V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 1.8V, 4.5V

Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®

Drain to Source Voltage (Vdss) : 20 V

Vgs (Max) : ±8V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 735 pF @ 10 V

Mounting Type : Surface Mount

Series : TrenchFET®

Supplier Device Package : SOT-23-3 (TO-236)

Mfr : Vishay Siliconix

Current - Continuous Drain (Id) @ 25°C : 4.5A (Ta), 5.9A (Tc)

Power Dissipation (Max) : 960mW (Ta), 1.7W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : SI2374

Description : MOSFET N-CH 20V 4.5A/5.9A SOT23

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N-Channel 20 V 4.5A (Ta), 5.9A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)

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