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SSM6H19NU,LF

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RTD (Resistance Temperature Detector) [1000]
Thermocouples, Temperature Probes [1083]
Thermostats - Mechanical [883]
Thermostats - Mechanical - Industrial [789]
Thermostats - Solid State [1012]

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SSM6H19NU,LF

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 1.2V @ 1mA

Operating Temperature : 150°C (TJ)

Package / Case : 6-UDFN Exposed Pad

Gate Charge (Qg) (Max) @ Vgs : 2.2 nC @ 4.2 V

Rds On (Max) @ Id, Vgs : 185mOhm @ 1A, 8V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 1.8V, 8V

Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®

Drain to Source Voltage (Vdss) : 40 V

Vgs (Max) : ±12V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 130 pF @ 10 V

Mounting Type : Surface Mount

Series : U-MOSVII-H

Supplier Device Package : 6-UDFN (2x2)

Mfr : Toshiba Semiconductor and Storage

Current - Continuous Drain (Id) @ 25°C : 2A (Ta)

Power Dissipation (Max) : 1W (Ta)

Technology : MOSFET (Metal Oxide)

Base Product Number : SSM6H19

Description : MOSFET N-CH 40V 2A 6UDFN

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N-Channel 40 V 2A (Ta) 1W (Ta) Surface Mount 6-UDFN (2x2)

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