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TPN1R603PL,L1Q

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TPN1R603PL,L1Q

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 2.1V @ 300µA

Operating Temperature : 175°C

Package / Case : 8-PowerVDFN

Gate Charge (Qg) (Max) @ Vgs : 41 nC @ 10 V

Rds On (Max) @ Id, Vgs : 1.6mOhm @ 40A, 10V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®

Drain to Source Voltage (Vdss) : 30 V

Vgs (Max) : ±20V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 3900 pF @ 15 V

Mounting Type : Surface Mount

Series : U-MOSIX-H

Supplier Device Package : 8-TSON Advance (3.1x3.1)

Mfr : Toshiba Semiconductor and Storage

Current - Continuous Drain (Id) @ 25°C : 80A (Tc)

Power Dissipation (Max) : 104W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : TPN1R603

Description : MOSFET N-CH 30V 80A 8TSON

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N-Channel 30 V 80A (Tc) 104W (Tc) Surface Mount 8-TSON Advance (3.1x3.1)

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