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TK9J90E,S1E

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TK9J90E,S1E

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 4V @ 900µA

Operating Temperature : 150°C (TJ)

Package / Case : TO-3P-3, SC-65-3

Gate Charge (Qg) (Max) @ Vgs : 46 nC @ 10 V

Rds On (Max) @ Id, Vgs : 1.3Ohm @ 4.5A, 10V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 10V

Package : Tube

Drain to Source Voltage (Vdss) : 900 V

Vgs (Max) : ±30V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 2000 pF @ 25 V

Mounting Type : Through Hole

Series : -

Supplier Device Package : TO-3P(N)

Mfr : Toshiba Semiconductor and Storage

Current - Continuous Drain (Id) @ 25°C : 9A (Ta)

Power Dissipation (Max) : 250W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : TK9J90

Description : MOSFET N-CH 900V 9A TO3P

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N-Channel 900 V 9A (Ta) 250W (Tc) Through Hole TO-3P(N)

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