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SI8824EDB-T2-E1

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SI8824EDB-T2-E1

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 800mV @ 250µA

Operating Temperature : -55°C ~ 150°C (TJ)

Package / Case : 4-XFBGA, CSPBGA

Gate Charge (Qg) (Max) @ Vgs : 6 nC @ 4.5 V

Rds On (Max) @ Id, Vgs : 75mOhm @ 1A, 4.5V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 1.2V, 4.5V

Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®

Drain to Source Voltage (Vdss) : 20 V

Vgs (Max) : ±5V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 400 pF @ 10 V

Mounting Type : Surface Mount

Series : TrenchFET®

Supplier Device Package : 4-Microfoot

Mfr : Vishay Siliconix

Current - Continuous Drain (Id) @ 25°C : 2.1A (Ta)

Power Dissipation (Max) : 500mW (Ta)

Technology : MOSFET (Metal Oxide)

Base Product Number : SI8824

Description : MOSFET N-CH 20V 2.1A MICROFOOT

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N-Channel 20 V 2.1A (Ta) 500mW (Ta) Surface Mount 4-Microfoot

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