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TPW1R306PL,L1Q

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TPW1R306PL,L1Q

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 2.5V @ 1mA

Operating Temperature : 175°C

Package / Case : 8-PowerWDFN

Gate Charge (Qg) (Max) @ Vgs : 91 nC @ 10 V

Rds On (Max) @ Id, Vgs : 1.29mOhm @ 50A, 10V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®

Drain to Source Voltage (Vdss) : 60 V

Vgs (Max) : ±20V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 8100 pF @ 30 V

Mounting Type : Surface Mount

Series : U-MOSIX-H

Supplier Device Package : 8-DSOP Advance

Mfr : Toshiba Semiconductor and Storage

Current - Continuous Drain (Id) @ 25°C : 260A (Tc)

Power Dissipation (Max) : 960mW (Ta), 170W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : TPW1R306

Description : MOSFET N-CH 60V 260A 8DSOP

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N-Channel 60 V 260A (Tc) 960mW (Ta), 170W (Tc) Surface Mount 8-DSOP Advance

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