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BSB056N10NN3GXUMA1

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BSB056N10NN3GXUMA1

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 3.5V @ 100µA

Operating Temperature : -40°C ~ 150°C (TJ)

Package / Case : 3-WDSON

Gate Charge (Qg) (Max) @ Vgs : 74 nC @ 10 V

Rds On (Max) @ Id, Vgs : 5.6mOhm @ 30A, 10V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V

Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®

Drain to Source Voltage (Vdss) : 100 V

Vgs (Max) : ±20V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 5500 pF @ 50 V

Mounting Type : Surface Mount

Series : OptiMOS™

Supplier Device Package : MG-WDSON-2, CanPAK M™

Mfr : Infineon Technologies

Current - Continuous Drain (Id) @ 25°C : 9A (Ta), 83A (Tc)

Power Dissipation (Max) : 2.8W (Ta), 78W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : BSB056

Description : MOSFET N-CH 100V 9A/83A 2WDSON

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N-Channel 100 V 9A (Ta), 83A (Tc) 2.8W (Ta), 78W (Tc) Surface Mount MG-WDSON-2, CanPAK M™

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