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Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature : -
Vgs(th) (Max) @ Id : 2.2V @ 250µA
Operating Temperature : 150°C
Package / Case : SOT-23-3 Flat Leads
Gate Charge (Qg) (Max) @ Vgs : 6.2 nC @ 4.5 V
Rds On (Max) @ Id, Vgs : 45mOhm @ 4A, 10V
FET Type : P-Channel
Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V
Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss) : 30 V
Vgs (Max) : +20V, -25V
Product Status : Active
Input Capacitance (Ciss) (Max) @ Vds : 492 pF @ 10 V
Mounting Type : Surface Mount
Series : U-MOSVI
Supplier Device Package : SOT-23F
Mfr : Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C : 4A (Ta)
Power Dissipation (Max) : 1W (Ta)
Technology : MOSFET (Metal Oxide)
Base Product Number : SSM3J340
Description : MOSFET P-CH 30V 4A SOT23F
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