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IRFH9310TRPBF

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IRFH9310TRPBF

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 2.4V @ 100µA

Operating Temperature : -55°C ~ 150°C (TJ)

Package / Case : 8-PowerVDFN

Gate Charge (Qg) (Max) @ Vgs : 58 nC @ 4.5 V

Rds On (Max) @ Id, Vgs : 4.6mOhm @ 21A, 10V

FET Type : P-Channel

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®

Drain to Source Voltage (Vdss) : 30 V

Vgs (Max) : ±20V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 5250 pF @ 15 V

Mounting Type : Surface Mount

Series : HEXFET®

Supplier Device Package : PQFN (5x6)

Mfr : Infineon Technologies

Current - Continuous Drain (Id) @ 25°C : 21A (Ta), 40A (Tc)

Power Dissipation (Max) : 3.1W (Ta)

Technology : MOSFET (Metal Oxide)

Base Product Number : IRFH9310

Description : MOSFET P-CH 30V 21A/40A PQFN

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P-Channel 30 V 21A (Ta), 40A (Tc) 3.1W (Ta) Surface Mount PQFN (5x6)

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