| Sign In | Join Free | My futurenowinc.com |
|
Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature : -
Vgs(th) (Max) @ Id : 2V @ 250µA
Operating Temperature : -55°C ~ 150°C (TJ)
Package / Case : TO-261-4, TO-261AA
Gate Charge (Qg) (Max) @ Vgs : 15.6 nC @ 5 V
Rds On (Max) @ Id, Vgs : 65mOhm @ 3.1A, 10V
FET Type : N-Channel
Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V
Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss) : 55 V
Vgs (Max) : ±16V
Product Status : Active
Input Capacitance (Ciss) (Max) @ Vds : 510 pF @ 25 V
Mounting Type : Surface Mount
Series : HEXFET®
Supplier Device Package : SOT-223
Mfr : Infineon Technologies
Current - Continuous Drain (Id) @ 25°C : 3.1A (Ta)
Power Dissipation (Max) : 1W (Ta)
Technology : MOSFET (Metal Oxide)
Base Product Number : IRLL024
Description : MOSFET N-CH 55V 3.1A SOT223
|
|
IRLL024NTRPBF Images |
Friendly Links: www.everychina.com
Home| Products| Suppliers| Site Map |About Us |Contact Us |Help |关于我们 |联系我们
Thank you! Your message has been sent to the following suppliers.
